The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Jul. 04, 2017
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Abhilash Ravi Kashyap, San Jose, CA (US);

Dale Charles Main, La Canada-Flintridge, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 7/10 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0632 (2013.01); G06F 3/0679 (2013.01); G11C 7/1006 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/10 (2013.01); G11C 16/3427 (2013.01);
Abstract

A data storage device includes a solid-state non-volatile memory including a plurality of memory cells and a controller. The controller is configured to reduce a read disturb effect of at least a portion of the solid-state non-volatile memory at least in part by receiving or accessing data to be written to the solid-state non-volatile memory, encoding the data using a programming pattern that favors a first programming state over a second programming state, the first programming state being associated with a higher voltage level than the second programming state, and writing the encoded data to the solid-state non-volatile memory.


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