The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Mar. 22, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Miki Miyanaga, Itami, JP;

Kenichi Watatani, Itami, JP;

Koichi Sogabe, Itami, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); C04B 35/00 (2006.01); C23C 14/00 (2006.01); C23C 14/34 (2006.01); C23C 14/08 (2006.01); H01L 21/02 (2006.01); C04B 35/01 (2006.01); C04B 35/626 (2006.01); H01L 29/786 (2006.01); B28B 3/00 (2006.01); C04B 35/64 (2006.01); C23C 14/35 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B28B 3/003 (2013.01); C04B 35/01 (2013.01); C04B 35/6261 (2013.01); C04B 35/62675 (2013.01); C04B 35/62685 (2013.01); C04B 35/64 (2013.01); C23C 14/08 (2013.01); C23C 14/35 (2013.01); H01B 1/08 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/22 (2013.01); H01L 29/7869 (2013.01); H01L 29/78609 (2013.01); H01L 29/78681 (2013.01); C04B 2235/326 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3427 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/602 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6583 (2013.01); C04B 2235/661 (2013.01); C04B 2235/72 (2013.01); C04B 2235/76 (2013.01); C04B 2235/77 (2013.01); C04B 2235/80 (2013.01);
Abstract

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cmand equal to or lower than 7.1 g/cm, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.


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