The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Mar. 28, 2018
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/58 (2006.01); H01L 49/02 (2006.01); H01B 3/10 (2006.01); C04B 35/626 (2006.01); C04B 35/64 (2006.01); C04B 35/622 (2006.01); C04B 35/634 (2006.01);
U.S. Cl.
CPC ...
C04B 35/58007 (2013.01); C04B 35/6262 (2013.01); C04B 35/6264 (2013.01); C04B 35/62218 (2013.01); C04B 35/62655 (2013.01); C04B 35/63416 (2013.01); C04B 35/64 (2013.01); H01B 3/10 (2013.01); H01L 28/55 (2013.01); C04B 2235/3886 (2013.01); C04B 2235/602 (2013.01); C04B 2235/612 (2013.01); C04B 2235/656 (2013.01); C04B 2235/768 (2013.01);
Abstract
A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of ABON(a+b+o+n=5), wherein 'A' is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, 'B' is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.