The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Aug. 07, 2018
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;
Inventors:
Assignee:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/083 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H01L 41/047 (2006.01); H03H 9/17 (2006.01); H01L 27/20 (2006.01); H01L 23/62 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 41/187 (2006.01); H01L 41/053 (2006.01); H03H 9/13 (2006.01); H01L 41/18 (2006.01); H01L 23/48 (2006.01); H03H 9/10 (2006.01); H03H 9/145 (2006.01); H01L 29/866 (2006.01); H01L 23/00 (2006.01); H03H 9/64 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02086 (2013.01); H01L 23/3107 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/62 (2013.01); H01L 27/20 (2013.01); H01L 41/0472 (2013.01); H01L 41/0475 (2013.01); H01L 41/0477 (2013.01); H01L 41/0533 (2013.01); H01L 41/083 (2013.01); H01L 41/183 (2013.01); H01L 41/1873 (2013.01); H03H 9/0211 (2013.01); H03H 9/02102 (2013.01); H03H 9/02574 (2013.01); H03H 9/02834 (2013.01); H03H 9/02984 (2013.01); H03H 9/0504 (2013.01); H03H 9/059 (2013.01); H03H 9/0542 (2013.01); H03H 9/0557 (2013.01); H03H 9/1071 (2013.01); H03H 9/132 (2013.01); H03H 9/14541 (2013.01); H03H 9/176 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 29/866 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/1403 (2013.01); H01L 2924/12035 (2013.01); H01L 2924/16235 (2013.01); H03H 9/64 (2013.01);
Abstract
A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5λ where λ is a wavelength defined by an electrode finger pitch of the IDT.