The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Jul. 29, 2016
Applicant:

Circuit Seed, Llc, Newport Beach, CA (US);

Inventors:

Susan Marya Schober, Corona Del Mar, CA (US);

Robert C. Schober, Huntington Beach, CA (US);

Assignee:

Circuit Seed, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/08 (2006.01); H03F 1/22 (2006.01); H03F 3/08 (2006.01); H03F 3/193 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01); H03F 3/30 (2006.01); H03K 19/0185 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45183 (2013.01); H01L 29/4238 (2013.01); H01L 29/78 (2013.01); H03F 1/083 (2013.01); H03F 1/223 (2013.01); H03F 3/082 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/3022 (2013.01); H03F 3/45475 (2013.01); H03K 19/018557 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03F 2203/45246 (2013.01); H03F 2203/45692 (2013.01);
Abstract

The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current field-effect transistors (NiFET and PiFET) and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel/W/L of drain channel).


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