The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Aug. 23, 2018
Applicant:

Shenzhen Goodix Technology Co., Ltd., Shenzhen, CN;

Inventor:

Shuo Fan, Shenzhen, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/30 (2006.01); H03F 1/02 (2006.01); H03F 3/72 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
H03F 1/301 (2013.01); H03F 1/0205 (2013.01); H03F 3/45179 (2013.01); H03F 3/45183 (2013.01); H03F 3/72 (2013.01); H03F 2200/297 (2013.01); H03F 2200/312 (2013.01); H03F 2200/447 (2013.01); H03F 2203/45134 (2013.01); H03F 2203/45631 (2013.01); H03F 2203/45726 (2013.01); H03K 19/20 (2013.01);
Abstract

The present disclosure discloses a dynamic amplification circuit, including: a first drive circuit, receives a first control signal to generate a first and a second voltage signal; a second drive circuit, receives the first and the second voltage signal to generate a first drive signal; a third drive circuit, receives the first control signal and the first drive signal to generate a second control signal; and a dynamic amplifier DA, controls a first and a second control switch according to the control signals; in a first time period, the first control signal is high level, the second control signal is low level; in a second time period, the opposite is the case; in a third time period, the first and the second control signal are both at low level, a duration of the second time period is inversely proportional to a transconductance of a transistor in a saturation region.


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