The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Jun. 19, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Jun-ichi Hashimoto, Osaka, JP;

Hiroyuki Yoshinaga, Osaka, JP;

Yukihiro Tsuji, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/12 (2006.01); H01S 5/00 (2006.01); H01S 5/028 (2006.01); H01S 5/227 (2006.01); H01S 5/40 (2006.01); H01S 5/22 (2006.01); B82Y 20/00 (2011.01); H01S 5/022 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3402 (2013.01); H01S 5/0071 (2013.01); H01S 5/0203 (2013.01); H01S 5/0216 (2013.01); H01S 5/0287 (2013.01); H01S 5/0425 (2013.01); H01S 5/12 (2013.01); H01S 5/1237 (2013.01); H01S 5/2224 (2013.01); H01S 5/2275 (2013.01); H01S 5/4031 (2013.01); B82Y 20/00 (2013.01); H01S 5/0202 (2013.01); H01S 5/02272 (2013.01); H01S 5/1231 (2013.01); H01S 5/34366 (2013.01); H01S 2301/163 (2013.01);
Abstract

A quantum cascade laser includes: a substrate having a principal surface, a back surface, and a substrate end face, the substrate end face extending along a reference plane intersecting a second direction which intersects the first direction; a semiconductor laminate having a laminate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; a second electrode disposed on the substrate; a first insulating film disposed on the laminate end face and the first electrode; a metal film disposed on the first insulating film, the laminate end face, the substrate end face, and the second electrode; and a second insulating film disposed on the first electrode, the second insulating film having a part on the first electrode between the metal film and the semiconductor laminate. On the first electrode, the second insulating film has a thickness larger than that of the first insulating film.


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