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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475984 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Aug. 30, 2016

Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin film

Applicants:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;

National Institute of Advanced Industrial Science and Technology, Chiyoda-ku, Tokyo, JP;

Inventors:

Keiichi Umeda, Nagaokakyo, JP;

Morito Akiyama, Tosu, JP;

Toshimi Nagase, Tosu, JP;

Keiko Nishikubo, Tosu, JP;

Atsushi Honda, Nagaokakyo, JP;

Assignees:

MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Chiyoda-Ku, Tokyo, JP;

Attorney:

Arent Fox LLP

Primary Examiner:

J San Martin

Int. Cl.
CPC ...
H01L 41/18 (2006.01); H01L 41/083 (2006.01); H01L 41/09 (2006.01); H01L 41/187 (2006.01); H01L 41/27 (2013.01); H01L 41/316 (2013.01); H03H 3/02 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); G10K 9/125 (2006.01); C04B 35/581 (2006.01); C23C 14/14 (2006.01); H01L 41/08 (2006.01); H03H 9/02 (2006.01); H03H 9/58 (2006.01); C04B 35/622 (2006.01);
U.S. Cl.
CPC ...
H01L 41/18 (2013.01); C04B 35/581 (2013.01); C04B 35/62218 (2013.01); C23C 14/0042 (2013.01); C23C 14/0617 (2013.01); C23C 14/0641 (2013.01); C23C 14/14 (2013.01); C23C 14/3435 (2013.01); C23C 14/3464 (2013.01); G10K 9/125 (2013.01); H01L 41/081 (2013.01); H01L 41/0805 (2013.01); H01L 41/0831 (2013.01); H01L 41/0973 (2013.01); H01L 41/187 (2013.01); H01L 41/27 (2013.01); H01L 41/316 (2013.01); H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/588 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/40 (2013.01); H03H 2003/023 (2013.01);
Abstract

A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.

Find Patent Forward Citations

Quick Actions:

Umeda, Keiichi. (2019). Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and method for manufacturing aluminum nitride piezoelectric thin film (U.S. Patent No. 10475984). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10475984

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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