The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Jan. 17, 2019
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Sang Youl Lee, Seoul, KR;

Kwang Ki Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/48 (2010.01); H01L 33/60 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/483 (2013.01); H01L 33/60 (2013.01); H01L 33/20 (2013.01); H01L 33/387 (2013.01); H01L 33/486 (2013.01); H01L 2224/16 (2013.01);
Abstract

Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.


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