The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Sep. 02, 2016
Dowa Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Tatsunori Toyota, Akita, JP;
DOWA Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Abstract
Provided is a method of producing an n-type ohmic electrode that can form a good ohmic contact with an n-type AlGaN (0.5≤x≤1) layer. The method of producing an n-type ohmic electrode includes: a first step of forming a first layermade of one of Ti and Hf on a surface of a layer; a second step of forming a second layermade of Sn on the surface of the first layer; a third step of forming a third layermade of one of V and Mo on the surface of the second layer; a fourth step of forming a fourth layermade of Al on the surface of the third layer; and a fifth step of performing heat treatment on the first layer, the second layer, the third layer, and the fourth layer