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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475963 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Mar. 13, 2018

Light emitting diode

Applicant:

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Thomas Lauermann, Heilbronn, DE;

Wolfgang Koestler, Heilbronn, DE;

Bianca Fuhrmann, Heilbronn, DE;

Assignee:

Azur Space Solar Power GmbH, Heilbronn, DE;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 33/38 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/10 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/0062 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/14 (2013.01); H01L 33/22 (2013.01); H01L 33/30 (2013.01); H01L 33/145 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0083 (2013.01);
Abstract

A light-emitting diode with a stacked structure, having a first region and a second region and a third region, wherein all three regions have a substrate and an n-doped lower cladding layer and an active layer generating electromagnetic radiation, wherein the active layer includes a quantum well structure, and a p-doped upper cladding layer, and the first region additionally has a tunnel diode formed on the upper cladding layer and composed of a p+ layer and an n+ layer, and an n-doped current distribution layer. The current distribution layer and the n-doped contact layer are covered with a conductive trace. At least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode, and the current distribution layer are monolithic in design. The second region has a contact hole with a bottom region.

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