The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Feb. 06, 2018
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tzung-Shiun Yeh, Hsinchu, TW;

Li-Ming Chang, Hsinchu, TW;

Chien-Fu Shen, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01);
Abstract

An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion, wherein in a top view, the first opening comprises an elongated shape defined by the first pad portion; a transparent conductive layer formed on the current blocking region and/or a surface of the semiconductor stack; and a first electrode formed above the current blocking region; wherein the transparent conductive layer comprises a second opening to expose the first opening, and the first electrode electrically connects the semiconductor stack through the first opening and the second opening.


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