The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Sep. 30, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Sung Dal Jung, Seoul, KR;

Hyun Don Song, Seoul, KR;

Ki Man Kang, Seoul, KR;

Seung Hwan Kim, Seoul, KR;

Jong Sub Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/36 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/00 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/505 (2013.01); H01L 33/62 (2013.01); H01L 33/60 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

Disclosed in an embodiment is a light emitting device comprising: a substrate; a light emitting structure, which includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first groove penetrating through the second semiconductor layer and the active layer and disposed up until a partial region of the first semiconductor layer; a reflective electrode layer covering a lower part of the second semiconductor layer and a sidewalls of the first groove; a first ohmic electrode disposed inside the first groove and electrically connected to the first semiconductor layer; and a first insulation layer for electrically insulating the first ohmic electrode and the reflective electrode layer.


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