The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jun. 15, 2016
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Tobias Gotschke, Berlin, DE;
Bastian Galler, Regensburg, DE;
Juergen Off, Regensburg, DE;
Werner Bergbauer, Windberg, DE;
Thomas Lehnhardt, Regensburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
The invention relates to a method for producing a nitride semiconductor component (), comprising the steps of: —providing a growth substrate () having a growth surface () formed from a planar area () with a plurality of three-dimensionally shaped surface structures () on said planar area (), —growing a nitride-based semiconductor layer sequence () on the growth surface (), growth beginning selectively on a growth area () of said growth substrate, and the growth area () being less than 45% of the growth surface (). The invention also relates to a nitride semiconductor component () which can be produced according to said method.