The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Aug. 18, 2016
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0747 (2012.01); H01L 31/0236 (2006.01); H01L 31/075 (2012.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0747 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/022441 (2013.01); H01L 31/075 (2013.01); H01L 31/18 (2013.01); Y02E 10/50 (2013.01);
Abstract
A photovoltaic device includes a liquid-repelling layer between the edges of a first amorphous semiconductor layer and the edges of a second amorphous semiconductor layer. No such a liquid-repelling layer is provided between the first amorphous semiconductor layer and the second amorphous semiconductor layer, except between the edges of the first amorphous semiconductor layer and the edges of the second amorphous semiconductor layer. The semiconductor layer in the photovoltaic device is therefore precisely patterned.