The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
May. 17, 2016
Sumitomo Metal Mining Co., Ltd., Tokyo, JP;
Yoshiyuki Abe, Ichikawa, JP;
Yasunori Yamanobe, Ome, JP;
Riichiro Wake, Ome, JP;
Masakazu Kuwahara, Ome, JP;
SUMITOMO METAL MINING CO., LTD., Tokyo, JP;
Abstract
Provided is a photoelectric conversion element comprising ITiO as a transparent electrode that is formed using an inline-type sputtering method, and utilizing the high transmittance up to the near-infrared ray region and excellent conductivity of ITiO. Using the inline-type sputtering method, a first transparent conductive oxide filmcomprising indium oxide or tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less is formed on a photoelectric conversion layerside, and a second transparent conductive oxide filmcomprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % is laminated on an opposite side of the first transparent conductive filmfrom the photoelectric conversion layer