The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Nov. 30, 2017
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Shao-Hui Wu, Singapore, SG;
Yu-Cheng Tung, Kaohsiung, TW;
Assignee:
Untied Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/8238 (2013.01); H01L 21/8258 (2013.01); H01L 27/0922 (2013.01); H01L 29/1033 (2013.01); H01L 29/66795 (2013.01); H01L 29/66969 (2013.01); H01L 29/7832 (2013.01); H01L 29/7856 (2013.01); H01L 29/78606 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01);
Abstract
A transistor structure includes a first oxide semiconductor layer, a source structure and a drain structure, and a second oxide semiconductor layer. The first oxide semiconductor layer is doped with sulfur. The source structure and the drain structure are disposed on the first oxide semiconductor layer, and a region of the first oxide semiconductor layer between the source structure and the drain structure forms a channel region. The second oxide semiconductor layer doped with sulfur is at least formed on the channel region of the first oxide semiconductor layer.