The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Nov. 06, 2015
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Koji Sadamatsu, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7815 (2013.01); H01L 29/0649 (2013.01); H01L 29/1608 (2013.01); H01L 29/47 (2013.01); H01L 29/66068 (2013.01);
Abstract
A drift layer is made of a wide bandgap semiconductor. First well regions are formed on the drift layer. A source region is formed on each of the first well regions. A gate insulating film is formed on the first well regions. A first electrode is in contact with the source regions, and has diode characteristics allowing unipolar conduction to the drift layer between the first well regions. A second well region is formed on the drift layer. A second electrode is in contact with the second well region, and separated from a gate electrode and the first electrode.