The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Mar. 14, 2017
Infineon Technologies Austria Ag, Villach, AT;
Britta Wutte, Feistritz, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for producing an integrated power transistor circuit includes forming at least one transistor cell in a cell array, each transistor cell having a doped region formed in a semiconductor substrate and adjoining a first surface of the semiconductor substrate on a first side of the semiconductor substrate, depositing a contact layer on the first side, structuring the contact layer to form a contact structure from the contact layer, the contact structure having, in a projection of the cell array orthogonal to the first surface, a first section and, outside the cell array, a second section which connects the first section to an interface structure, and forming an electrode structure on and in direct contact with the first section in the orthogonal projection of the cell array, the electrode structure being absent outside the cell array.