The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jan. 11, 2018
Globalfoundries Inc., Grand Cayman, KY;
Hiroaki Niimi, Cohoes, NY (US);
Steven Bentley, Menands, NY (US);
Romain Lallement, Troy, NY (US);
Brent A. Anderson, Jericho, VT (US);
Junli Wang, Slingerlands, NY (US);
Muthumanickam Sankarapandian, Niskayuna, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method of forming a merged source/drain region is disclosed that includes forming first and second VOCS structures above a semiconductor substrate, forming a recess in the substrate between the first and second VOCS structures and forming a P-type-doped semiconductor material in the recess. In this particular example, the method also includes removing a first substantially horizontally-oriented portion of the P-type-doped semiconductor material from within the recess while leaving a second substantially horizontally-oriented portion of the P-type-doped semiconductor material remaining in the recess and forming a substantially horizontally-oriented N-type-doped semiconductor material in the recess laterally adjacent the second substantially horizontally-oriented portion of the P-type-doped semiconductor material, wherein the substantially horizontally-oriented N-type-doped semiconductor material physically engages the second substantially horizontally-oriented portion of the P-type-doped semiconductor material along an interface within the merged source/drain region.