The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
May. 26, 2017
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
Zheng Bian, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A trench gate lead-out structure comprises a substrate (), a trench formed in the surface of the substrate () and a first dielectric layer () on the substrate (), and also comprises a polysilicon gate () at the inner surface of the trench. The trench is partially filled by the polysilicon gate (), so that a recess exists in the trench above the polysilicon gate (). A second dielectric layer () is filled in the recess. The trench gate lead-out structure also comprises a metal plug (). The metal plug () downwards penetrates through the first dielectric layer () and then is inserted between the second dielectric layer () and the polysilicon gate (), and accordingly is connected to the polysilicon gate ().