logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475883 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Dec. 10, 2017

Semiconductor device and method of manufacturing thereof

Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Masaru Kadoshima, Tokyo, JP;

Masahiko Fujisawa, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Michael M Trinh

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 23/522 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/0265 (2013.01); H01L 21/76283 (2013.01); H01L 21/76802 (2013.01); H01L 21/76897 (2013.01); H01L 21/84 (2013.01); H01L 23/5226 (2013.01); H01L 27/1203 (2013.01); H01L 29/41733 (2013.01); H01L 29/66772 (2013.01); H01L 29/78618 (2013.01); H01L 29/78624 (2013.01); H01L 29/78654 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02647 (2013.01);
Abstract

In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.

Find Patent Forward Citations

Kadoshima, Masaru. (2019). Semiconductor device and method of manufacturing thereof (U.S. Patent No. 10475883). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10475883

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…