The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Aug. 24, 2017
Infineon Technologies Austria Ag, Villach, AT;
Giulio Fragiacomo, Villach, AT;
Armin Willmeroth, Friedberg, DE;
Bjoern Fischer, Munich, DE;
Rene Mente, Riegersdorf, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor device includes drain, source and gate nodes, a plurality of drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type complementary to the first doping type, and a control structure connected between the drift region of each of the drift and compensation cells and the source node. Each drift region is coupled to the drain node and each compensation region cells is coupled to the source node. A first type doping concentration Nof the drift region is higher than a first doping level L, and a second type doping concentration Nof the compensation region is higher than a second doping level L.