logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475831 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Sep. 05, 2016

Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device

Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Susumu Inoue, Kanagawa, JP;

Yuhi Yorikado, Kanagawa, JP;

Atsushi Toda, Kanagawa, JP;

Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;

Attorney:

Chip Law Group

Primary Examiner:

Sophia T Nguyen

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/107 (2006.01); H01L 31/0224 (2006.01); H04N 9/04 (2006.01); H01L 31/101 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 21/02 (2006.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); H01L 21/02107 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14607 (2013.01); H01L 27/14636 (2013.01); H01L 27/14638 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 31/02005 (2013.01); H01L 31/02027 (2013.01); H01L 31/02162 (2013.01); H01L 31/022408 (2013.01); H01L 31/0352 (2013.01); H01L 31/03529 (2013.01); H01L 31/035263 (2013.01); H01L 31/107 (2013.01); H01L 31/1013 (2013.01); H04N 9/0451 (2018.08); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14647 (2013.01); H01L 31/028 (2013.01); H01L 31/0304 (2013.01); H01L 31/1804 (2013.01); H01L 31/184 (2013.01); H01L 31/1808 (2013.01);
Abstract

The present technology relates to a solid-state image sensing device for preventing a reduction in light receiving sensitivity of an avalanche photodiode, an electronic device, and a method for manufacturing the solid-state image sensing device. A solid-state image sensing device includes an avalanche photodiode having a first region of a first conductive type, a second region of a second conductive type different from the first conductive type, and an avalanche region sandwiched between the first region and the second region, which extend in a thickness direction of a semiconductor substrate, and a film formed on at least one side of the semiconductor substrate and including a metal oxide film, a metal nitride film, or a mix crystal-based film of metal oxide film and metal nitride film. The present technology can be applied to CMOS image sensors, for example.

Find Patent Forward Citations

Loading…