The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jul. 25, 2018
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;
Liangfen Zhang, Guangdong, CN;
Xiaoxing Zhang, Guangdong, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The invention provides a TFT backplane and manufacturing method thereof, wherein the TFT backplane comprises a substrate (); a gate () and a first metal electrode () formed on the substrate (); a gate insulating layer () formed on the substrate () and covering the gate () and the first metal electrode (), the gate insulating layer () on the first metal electrode () having a thickness less than thickness of the gate insulating layer () on the gate (); an etch stop layer (ESL) () on the gate insulating layer () and a second metal electrode () on the ESL (). Only a portion of the gate insulating layer deposited on the first metal electrode is etched away, and the first metal electrode always protects the gate insulating layer, so that the first metal electrode is not damaged by the etching gas, favorable for the final storage capacitor.