The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Sep. 27, 2018
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Junpei Yanaka, Tochigi, JP;
Kayo Kumakura, Tochigi, JP;
Masataka Sato, Tochigi, JP;
Satoru Idojiri, Tochigi, JP;
Kensuke Yoshizumi, Isehara, JP;
Mari Tateishi, Ebina, JP;
Natsuko Takase, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.