The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Aug. 31, 2017
Toshiba Memory Corporation, Tokyo, JP;
Takamasa Ito, Nagoya Aichi, JP;
Toshiaki Fukuzumi, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor memory device includes a first electrode layer extending in a first direction, a second electrode layer above the first electrode layer and extending in the first direction, a third electrode layer above the first electrode layer and extending in the first direction, an insulating member between the second and third electrode layers and extending in the first direction, first semiconductor members extending in the second direction through the first and second electrodes, second semiconductor members extending in the second direction through the first and third electrode layers, and third semiconductor members extending in the second direction, each having a first portion between the second and third electrode layers and in contact with the insulating member, and a second portion extending through the first electrode layer. In the first direction, an arrangement density of the third semiconductor members is lower than that of the first or second semiconductor member.