The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Feb. 28, 2018
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Mikiko Yagi, Ama Aichi, JP;

Hideto Takekida, Nagoya Aichi, JP;

Takaya Yamanaka, Yokkaichi Mie, JP;

Masaharu Mizutani, Yokkaichi Mie, JP;

Hideo Wada, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11575 (2017.01); H01L 27/12 (2006.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11575 (2013.01); H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 27/1207 (2013.01);
Abstract

A semiconductor memory device includes a substrate with a first insulating film thereon, a wiring in the first insulating film, a first electrode film on the first insulating film, a stacked body on the first electrode film, made of alternating second insulating films and second electrode films, a first insulating member extending in a direction to penetrate the stacked body, a first semiconductor film around the first insulating member and connected to the first electrode film, a third insulating film around the first semiconductor film, a first conductive member extending in the direction to penetrate the stacked body and the first electrode film, and connected to the wiring, and a fourth insulating film around the first conductive member. The fourth insulating film has the same film structure as the third insulating film.


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