The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jan. 03, 2018
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Sanghun Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11502 (2017.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); G11C 11/22 (2006.01); H01L 27/24 (2006.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11502 (2013.01); G11C 11/22 (2013.01); G11C 13/0069 (2013.01); H01L 27/2418 (2013.01); H01L 27/2463 (2013.01); H01L 45/00 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); G11C 2213/54 (2013.01); H01L 27/11507 (2013.01); H01L 28/55 (2013.01);
Abstract
A ferroelectric memory device includes a first electrode layer disposed on a substrate, a first tunnel barrier layer disposed on the first electrode layer, a second electrode layer disposed on the first tunnel barrier layer, a second tunnel barrier layer disposed on the second electrode layer, and a third electrode layer disposed on the second tunnel barrier layer. Any one of the first and second tunnel barrier layers includes a ferroelectric material.