The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Oct. 11, 2018
Applicant:

Longitude Licensing Limited, Dublin, IE;

Inventor:

Yoshinori Ikebuchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/76 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10876 (2013.01); H01L 21/308 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76 (2013.01); H01L 21/76224 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/10891 (2013.01); H01L 27/10894 (2013.01); H01L 29/0649 (2013.01); H01L 27/0207 (2013.01);
Abstract

One method for manufacturing a semiconductor device includes: forming provisional active regions that are shaped such that active regions that are adjacent in an X direction are connected to each other, forming a sacrificial film, performing etching, including the sacrificial film, so as to form a plurality of first trenches that separate the active regions, embedding element-isolating insulating films in the first trenches and then removing the sacrificial film, forming first side-wall insulating films that cover the exposed side surfaces of the element-isolating insulating films and second side-wall insulating films that cover the side surfaces of the first side-wall insulating films, embedding cap insulating films in second trenches that appear due to the formation of the second side-wall insulating films, and forming a plurality of third trenches at the positions of the second side-wall insulating films and forming word lines thereunder.


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