The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Oct. 13, 2017
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Jan Claes, Nijmegen, NL;

Stephen John Sque, Veldhoven, GB;

Maarten Jacobus Swanenberg, Berg en Dal, NL;

Da-Wei Lai, Nijmegen, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/735 (2006.01); H01L 29/10 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0277 (2013.01); H01L 27/0259 (2013.01); H01L 27/0705 (2013.01); H01L 29/1008 (2013.01); H01L 29/735 (2013.01);
Abstract

Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.


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