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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475721 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Mar. 12, 2019

Power semiconductor device and method for manufacturing same

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yasunari Hino, Tokyo, JP;

Kiyoshi Arai, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 25/00 (2006.01); H01L 25/11 (2006.01); H01L 23/373 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 21/4875 (2013.01); H01L 23/3735 (2013.01); H01L 23/4334 (2013.01); H01L 23/49562 (2013.01); H01L 23/5283 (2013.01); H01L 23/53228 (2013.01); H01L 24/31 (2013.01); H01L 24/39 (2013.01); H01L 25/115 (2013.01); H01L 25/50 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/49548 (2013.01); H01L 23/49575 (2013.01); H01L 2224/40137 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

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