The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Apr. 26, 2017
Applicant:
Kobe Steel, Ltd., Hyogo, JP;
Inventors:
Assignee:
Kobe Steel, Ltd., Hyogo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 22/02 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/32 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 22/02 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01); H01L 29/32 (2013.01); H01L 29/7869 (2013.01);
Abstract
A quality evaluation method for an oxide semiconductor thin film includes: selecting a peak value having a largest calculated value and a time constant for the peak value among calculated values obtained by substituting each signal value for respective elapsed times after stopping excitation light irradiation and the corresponding elapsed time into the following Equation (1); and estimating, from the peak value and the time constant, an energy level of defect state and the defect density in the oxide semiconductor thin film:=(signal value)×(elapsed time for the signal value)  Equation 1.