The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Jul. 29, 2015
Applicant:

Wuxi Huaying Microelectronics Technology Co., Ltd., Wuxi, Jiangsu, CN;

Inventors:

Sophia Wen, Wuxi, CN;

Nitao Zhang, Wuxi, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 3/08 (2006.01); B08B 3/14 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02052 (2013.01); B08B 3/08 (2013.01); B08B 3/14 (2013.01); H01L 21/67023 (2013.01); B08B 2203/005 (2013.01);
Abstract

An apparatus and a method for processing one or more surfaces of a semiconductor wafer with one or more ozone-containing fluids are provided. The apparatus includes an ozone generator, a solvent flask, a gas-liquid mixing device, and a processing chamber capable of receiving the semiconductor wafer. The apparatus may also include one or more gas-liquid separation devices and switching valves. The processing chamber allows the ozone-containing fluids to enter the processing chamber for treating the wafer surface. The effectiveness of the treatment is ensured by enhancing the ozone concentration of the ozone-containing fluids inside the processing chamber, in either or both gas and liquid phases. The employment of a micro chamber as the processing chamber also helps to reduce the consumption of the treatment gas and liquid, as well as the resulted waste emission.


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