The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Mar. 28, 2018
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Takeshi Shibahara, Tokyo, JP;

Yuki Nagamine, Tokyo, JP;

Yoshitomo Tanaka, Tokyo, JP;

Kumiko Yamazaki, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H01L 49/02 (2006.01); H01G 4/08 (2006.01); C01B 21/082 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); C01B 21/0821 (2013.01); H01G 4/085 (2013.01); H01L 28/55 (2013.01); C01P 2002/60 (2013.01); C01P 2002/78 (2013.01); C01P 2006/40 (2013.01); H01G 4/306 (2013.01);
Abstract

The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of ABON(a+b+o+n=5), wherein said 'A' is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said 'B' is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.


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