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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10475583 B1

PDFFull Text
Date of Patent:
Nov. 12, 2019

Filed:

Jan. 19, 2018

Dielectric composites, and multi-layered capacitors and electronic devices comprising thereof

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Chan Kwak, Yongin-si, KR;

Hyun Sik Kim, Suwon-si, KR;

Jong Wook Roh, Anyang-si, KR;

Kyoung-Seok Moon, Hwaseong-si, KR;

Hyeon Cheol Park, Hwaseong-si, KR;

Yoon Chul Son, Hwaseong-si, KR;

Daejin Yang, Yeongju-si, KR;

Doh Won Jung, Seoul, KR;

Youngjin Cho, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Karl E Group

Int. Cl.
CPC ...
H01G 4/12 (2006.01); C04B 35/46 (2006.01); H01G 4/30 (2006.01); H01G 4/14 (2006.01); C04B 35/47 (2006.01); C04B 35/628 (2006.01); H01C 7/00 (2006.01); H01C 7/10 (2006.01); H01C 7/18 (2006.01); H01C 17/065 (2006.01); H01G 4/248 (2006.01); H01G 4/232 (2006.01);
U.S. Cl.
CPC ...
H01G 4/30 (2013.01); C04B 35/47 (2013.01); C04B 35/62805 (2013.01); C04B 35/62815 (2013.01); H01C 7/008 (2013.01); H01C 7/1006 (2013.01); H01C 7/18 (2013.01); H01C 17/06533 (2013.01); H01G 4/1218 (2013.01); H01G 4/1227 (2013.01); H01G 4/1236 (2013.01); H01G 4/1245 (2013.01); H01G 4/14 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3255 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/6588 (2013.01); C04B 2235/781 (2013.01); C04B 2235/79 (2013.01); C04B 2235/85 (2013.01); C04B 2237/346 (2013.01); C04B 2237/68 (2013.01); H01G 4/232 (2013.01); H01G 4/248 (2013.01);
Abstract

A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.

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