The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jul. 10, 2015
Japan Advanced Institute of Science and Technology, Ishikawa, JP;
Adamant Co., Ltd., Tokyo, JP;
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Tokyo, JP;
ADAMANT NAMIKI PRECISION JEWEL CO., LTD., Tokyo, JP;
Abstract
There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layerincludes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a β-BiNbO-type crystal structure. The oxide layerhas a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layerin a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layerin the temperature range.