The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Apr. 07, 2017
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Florian Schoen, Altdorf, DE;

Christian Lemier, Reutlingen, DE;

Torsten Kramer, Wannweil, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01P 5/12 (2006.01); G01F 1/692 (2006.01); G01F 1/684 (2006.01); B81B 3/00 (2006.01); G01F 1/86 (2006.01);
U.S. Cl.
CPC ...
G01P 5/12 (2013.01); B81B 3/0081 (2013.01); G01F 1/684 (2013.01); G01F 1/692 (2013.01); G01F 1/86 (2013.01); B81B 2201/0278 (2013.01); B81B 2203/0127 (2013.01);
Abstract

A sensor element for thermal anemometry includes a semiconductor substrate and a thin-film diaphragm attached to the semiconductor substrate and having a front side and a rear side. A resistive heating element and a temperature-dependent resistor are attached to the front side of the thin-film diaphragm. In the area of the rear side of the thin-film diaphragm, the semiconductor substrate has a first recess. A silicon layer including a recess which merges with the first recess of the semiconductor substrate is located between the thin-film diaphragm and the semiconductor substrate.


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