The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Aug. 15, 2016
Chang Gung University, Taoyuan, TW;
Chao-Sung Lai, Taoyuan, TW;
Chia-Ming Yang, Taoyuan, TW;
Chun-Hui Chen, Zhushan Township, Nantou County, TW;
Tsung-Cheng Chen, Yuanshan Township, Yilan County, TW;
CHANG GUNG UNIVERSITY, Taoyuan, TW;
Abstract
Light-addressable potentiometric sensing units are provided. A light-addressable potentiometric sensing unit comprises a conductive substrate, a metal oxide semiconductor layer, and a sensing layer. The metal oxide semiconductor layer is made of indium gallium zinc oxide, indium gallium oxide, indium zinc oxide, indium oxide co-doped with tin and zinc, tin oxide, or zinc oxide. The wide-band gap characteristic of the metal oxide semiconductor layer enables the light-addressable potentiometric sensing unit to resist the interference from visible light. The light-addressable potentiometric sensing unit therefore exhibits a more stable performance.