The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Dec. 15, 2016
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Keiichi Takanashi, Tokyo, JP;

Ken Hamada, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/26 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/26 (2013.01); C30B 15/203 (2013.01); C30B 29/06 (2013.01); Y10T 117/1004 (2015.01); Y10T 117/1008 (2015.01);
Abstract

A silicon single crystal manufacturing method in which the distance between the heat shield and the melt level of the melt can be regulated in a high precision. The real image includes at least the circular opening of the heat shield provided in such a way that the heat shield covers a part of the melt level of the silicon melt. The mirror image is a reflected image of the heat shield on the surface of the silicon melt. Based on the distance between the obtained real image and the mirror image, the melt level position of the silicon melt is computed, and the distance between the heat shield and the melt level position is regulated.


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