The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Feb. 17, 2016
Applicant:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Inventors:
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C30B 29/38 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/34 (2013.01); C30B 25/183 (2013.01); C30B 29/38 (2013.01); C30B 29/403 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02658 (2013.01); H01L 21/20 (2013.01); H01L 21/205 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01);
Abstract
A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 μm.