The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Nov. 30, 2016
Sony Corporation, Tokyo, JP;
Yoshimichi Kumagai, Kanagawa, JP;
Takashi Abe, Kanagawa, JP;
Kazuyoshi Yamashita, Kanagawa, JP;
Ryoto Yoshita, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer. The generated-charge retention gate portion applies a control voltage that is a voltage for controlling potential of the generated-charge retention portion to the generated-charge retention portion during a period of the generated-charge transfer and the retained-charge transfer, applies a bias voltage that is a voltage having a polarity different from the control voltage to the generated-charge retention portion during a period different from the period of the generated-charge transfer and the retained-charge transfer, and applies the bias voltage to the generated-charge retention portion after applying an approximately intermediate voltage between the control voltage and the bias voltage to the generated-charge retention portion at the end of the period of the retained-charge transfer.