The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Mar. 01, 2018
Applicant:

Dialog Semiconductor (Uk) Limited, London, GB;

Inventors:

Horst Knoedgen, Munich, DE;

Christoph N. Nagl, Graz, AT;

Nebojsa Jelaca, Graz, AT;

Frank Kronmueller, Neudenau, DE;

Ambreesh Bhattad, Swindon, GB;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/687 (2006.01); H02M 3/155 (2006.01); H03K 17/06 (2006.01); H03K 3/57 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); H03K 3/57 (2013.01); H03K 17/687 (2013.01); H01L 29/778 (2013.01);
Abstract

A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The control circuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch. The proposed circuit provides additional gate voltages, by contrast to conventional two-level gate drivers. By appropriate choice of the additional gate voltages, reverse mode conductance losses of the transistor device can be reduced and/or to the Safe Operating Area (SOA) of the transistor device can be improved.


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