The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Aug. 17, 2017
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Haruhi Oooka, Kawasaki, JP;
Atsuko Iida, Yokohama, JP;
Hideyuki Nakao, Setagaya, JP;
Kenji Todori, Yokohama, JP;
Takeshi Gotanda, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/4253 (2013.01); H01L 51/0007 (2013.01); H01L 51/0026 (2013.01); H01L 51/0036 (2013.01); H01L 51/0043 (2013.01); H01L 51/0046 (2013.01); H01L 2251/308 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.R—(CH)—R  (1)