The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Dec. 09, 2016
Iii Holdings 3, Llc, Wilmington, DE (US);
Michiya Yamada, Tokyo, JP;
Yasuchi Ogimoto, Tokyo, JP;
III HOLDINGS 3, LLC, Wilmington, DE (US);
Abstract
The invention provides a magnetoresistance element with a configuration such that a stable switching action is possible with a current flowing in response to the application of a unipolar electrical pulse, and a non-volatile semiconductor storage device using the magnetoresistance element. A magnetoresistance element-includes a magnetic tunnel junction portionconfigured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic bodyhas a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layerside interface. A heat assist layer-that heats the second magnetic bodywith a heat generated based on a current flowing through the magnetic tunnel junction portionis further provided, and the magnetization direction of the second magnetic bodyis reversed by the heating of the second magnetic body. A non-volatile semiconductor storage device-includes the magnetoresistance element-, a switching element connected in series to the magnetoresistance element-, information rewriting means that carries out a write and erase by causing a write current to flow through the magnetoresistance element-, and reading means that reads information stored from the amount of current flowing through the magnetoresistance element-