The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Dec. 20, 2013
Applicant:
Korea Institute of Industrial Technology, Cheonan-si, Chungcheongnam-do, KR;
Inventors:
Chae Hwan Jeong, Gwangju, KR;
Jong Hwan Lee, Daejeon, KR;
Ho Sung Kim, Gwangju, KR;
Chang Heon Kim, Gwangju, KR;
Assignee:
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, Chungcheongnam-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/068 (2012.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 31/068 (2013.01); H01L 31/028 (2013.01); H01L 31/02363 (2013.01); H01L 31/035227 (2013.01); H01L 31/035281 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
Disclosed are a silicon wafer having a complex structure, a method of fabricating the same, and a solar cell using the same, wherein the silicon wafer is configured such that an oriented silicon wafer has a pyramid pattern formed through wet etching and additionally has nanowires formed in the direction in which silicon crystals are oriented on the pyramid pattern, and is further doped with POCl.