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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10468543 B1

PDFFull Text
Date of Patent:
Nov. 05, 2019

Filed:

Mar. 08, 2019

Microstructure enhanced absorption photosensitive devices

Applicant:

W&wsens, Devices Inc., Los Altos, CA (US);

Inventors:

Shih-Yuan Wang, Palo Alto, CA (US);

Shih-Ping Wang, Los Altos, CA (US);

M. Saif Islam, Davis, CA (US);

Assignee:

W&Wsens Devices, Inc., Los Altos, CA (US);

Attorney:

Cooper & Dunham LLP

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/0232 (2014.01); G02B 1/00 (2006.01); H01L 31/02 (2006.01); H01L 31/028 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 31/107 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H04B 10/69 (2013.01); H04B 10/40 (2013.01); H04B 10/25 (2013.01); H04B 10/80 (2013.01); H01L 31/09 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); G02B 1/002 (2013.01); G02B 1/005 (2013.01); H01L 27/1443 (2013.01); H01L 27/1446 (2013.01); H01L 27/14625 (2013.01); H01L 31/02 (2013.01); H01L 31/02002 (2013.01); H01L 31/028 (2013.01); H01L 31/02016 (2013.01); H01L 31/0232 (2013.01); H01L 31/0236 (2013.01); H01L 31/02325 (2013.01); H01L 31/02327 (2013.01); H01L 31/035218 (2013.01); H01L 31/035281 (2013.01); H01L 31/09 (2013.01); H01L 31/103 (2013.01); H01L 31/105 (2013.01); H01L 31/107 (2013.01); H01L 31/1804 (2013.01); H01L 31/1808 (2013.01); H04B 10/25 (2013.01); H04B 10/40 (2013.01); H04B 10/691 (2013.01); H04B 10/6971 (2013.01); H04B 10/801 (2013.01); Y02E 10/547 (2013.01);
Abstract

Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

Find Patent Forward Citations

Quick Actions:

Wang, Shih-Yuan. (2019). Microstructure enhanced absorption photosensitive devices (U.S. Patent No. 10468543). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10468543

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