The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Dec. 23, 2013
United States of America, As Represented BY the Secretary of the Army, Fort Belvoir, VA (US);
Neil F. Baril, Stafford, VA (US);
Sumith V. Bandara, Fairfax Station, VA (US);
UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE ARMY, Washington, DC (US);
Abstract
An AlSb lattice matched barrier infrared detector architecture with the AlSb binary barrier layer enables implementation of strain layer superlattice absorbers with higher absorption coefficients for improved quantum efficiency, presents a simplified structure for epitaxial growth, and enables the utilization of bulk InAsSbabsorber material with a 5.0 μm cutoff for both single and dual color devices. Such an infrared detector is formed by growing the detector material; bottom contact, 1absorber layer, AlSb barrier, optional graded layer, 2absorber layer, top contact, on top of an AlSb lattice matched buffer layer. Epitaxial growth on the AlSb lattice enables the deposition of unstrained bulk InAsSbwith a 5.0 μm cutoff, as well as InAs/InAsSbsuperlattice absorbers with a continuously tunable cutoff from mid-wavelength to long-wavelength infrared.