The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Apr. 07, 2011
Shinya Morita, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Takeaki Maeda, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Yasuaki Terao, Kobe, JP;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Takeaki Maeda, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Yasuaki Terao, Kobe, JP;
Aya Miki, Kobe, JP;
Kobe Steel, Ltd., Kobe-shi, JP;
Abstract
Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.