Semiconductor device and method for manufacturing same

Abstract

A semiconductor device includes at least one thin film transistor (), the at least one thin film transistor including a semiconductor layer (A,B) which includes a channel region (A,), a high-concentration impurity region, and a low-concentration impurity region (A,B) which is located between the channel region and the high-concentration impurity region, a gate electrode (A,B) provided on a gate insulating layer (), an interlayer insulating layer () provided on the gate electrode, and a source electrode (A,B) and a drain electrode (A,B), wherein the interlayer insulating layer and the gate insulating layer have a contact hole extending to the semiconductor layer, at least one of the source electrode (A,B) and the drain electrode (A,B) being in contact with the high-concentration impurity region inside the contact hole, at a side wall of the contact hole, a side surface of the gate insulating layer is aligned with a side surface of the interlayer insulating layer, and at an upper surface of the semiconductor layer, an edge of the contact hole aligned with an edge of the high-concentration impurity region.